Avalanche Photodiode with Amplitude Modulated Sine Gating

In this work the model of an avalanche photodiode for QKD in the so-called Geiger mode operating with an amplitude modulated sine gating is analyzed and simulated. It is shown that the use of this type of gating can reduce the magnitude of the avalanches and hence the population of charge carriers trapped in deep levels traps, thereby reducing the afterpulsing effect (Pap) and the dark count rate (DCR).