Switching Characteristics of Tunneling Injection and Diffusion Injection Single Quantum-Well Semiconductor Optical Amplifiers

Cristiano De Mello Gallep, Evandro Conforti

DOI: 10.14209/sbrt.2001.06500042

Evento: XIX Simpósio Brasileiro de Telecomunicações (SBrT2001)

Keywords:

Abstract

"A simple model for quantum well semiconductor optical amplifier simulation is presented. Carrier population transients in the separate confinement heterostructure and in the unconfined (above) and confined (inside) states of the quantum well are considered. Simulations results for pure tunneling and pure diffusion cases of the injected current in the switching action are presented. Switching times under 50ps are obtained for high input optical power (100µW) and a 0.3-1mA current step."

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